MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CLA120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol
VCC(PROT)
VCC(surge)
TC
Tstg
Viso
Parameter
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = +125°C Start
Applied between : P-N, Surge value
(Note-2)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Ratings
800
1000
–20 ~ +100
–40 ~ +125
2500
Unit
V
V
°C
°C
Vrms
THERMAL RESISTANCES
Symbol
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Parameter
Junction to case Thermal
Resistances
Rth(c-f)
Contact Thermal Resistance
Condition
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Case to fin, (per 1 module)
Thermal grease applied
Min.
(Note-1) —
(Note-1) —
(Note-2) —
(Note-2) —
—
Limits
Typ.
—
—
—
—
—
(Note-1) TC measurement point is just under the chips (Bottom view).
If you use this value, Rth(f-a) should be measured just under the chips.
(Note-2) TC measurement point is as shown below (Top view).
Table1 : TC measurement point of just under the chips.
arm
UP
VP
WP
axis
IGBT FWDi IGBT FWDi IGBT FWDi
X
28.3 28.3 65.0 65.0 87.0 87.0
Y
–8.2 2.0 –8.2 2.0 –8.2 2.0
UN
IGBT FWDi
39.3 39.3
6.2 –4.0
VN
IGBT FWDi
54.0 54.0
6.2 –4.0
(Unit : mm)
WN
IGBT FWDi
76.0 76.0
6.2 –4.0
Max.
0.21
0.30
0.27
0.39
0.038
Unit
°C/W
Bottom view
Top view
TC (Base plate)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
Condition
Min.
VD = 15V, IC = 75A
Tj = 25°C
—
VCIN = 0V, Pulsed
(Fig. 1) Tj = 125°C
—
–IC = 75A, VD = 15V, VCIN = 15V
(Fig. 2) —
VD = 15V, VCIN = 0V↔15V
VCC = 600V, IC = 75A
Tj = 125°C
Inductive Load
0.5
—
—
—
(Fig. 3,4)
—
Tj = 25°C
—
VCE = VCES, VCIN = 15V
(Fig. 5) Tj = 125°C
—
Limits
Typ.
1.8
1.9
2.5
1.0
0.5
0.4
2.0
0.7
—
—
Unit
Max.
2.3
2.4
V
3.5
V
2.5
0.8
1.0
µs
3.0
1.2
1
10
mA
Oct. 2003