PM150CSE060 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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PM150CSE060 Datasheet PDF : 6 Pages
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PM150CSE060
MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOT WPOERWEMRODMUOLDEUSL>ES>
PM150PCMS15E0C0S6E0060
FLAFTL-ABTA-SBEASTEYPTEYPE
INSIUNLSAUTLEADTEPDACPKAACGKEAGE
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
• 3φ 150A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 15/18.5kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
110±1
95±0.5
2-2.54 2-2.54 2-2.54 6-2.54
17.02 10.16 10.16 10.16
3.22
123
4 56
78 9
10 12 14 16
11 13 15
12
4-φ5.5
MOUNTING HOLES
Screwing depth
Min9.0
Terminal code
1. VUPC
2. UP
3. VUP1
4. VVPC
5. VP
6. VVP1
7. VWPC
8. WP
9. VWP1
10. VNC
11. VN1
12. NC
13. UN
14. VN
15. WN
16. FO
W
0.5±0.3
24.5
A
V
U
26
26
67.4
16- 0.64
4-R6
6-M5NUTS
2-φ2.54
21.2
22
+1.0
–0.5
φ2.54
3.22 2-2.54 0.64
LABEL
A : DETAIL
Sep. 2001
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