Philips Semiconductors
PHM15NQ20T
TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 160 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 15 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 10 V; ID = 3 A; Figure 7 and 8
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 4 A; VDD = 100 V; VGS = 10 V; Figure 13
VGS = 0 V; VDS = 30 V; f = 1 MHz; Figure 11
VDD = 100 V; RL = 100 Ω;
VGS = 10 V; RG = 5.6 Ω
VSD
source-drain (diode forward) voltage IS = 10 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 10 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr
recovered charge
Min Typ Max Unit
200 -
-
V
178 -
-
V
23
1.2 -
-
-
4V
-
V
4.4 V
-
-
1 µA
-
-
100 µA
-
10 100 nA
-
71 85 mΩ
-
170 204 mΩ
-
68 80 mΩ
-
40 -
nC
-
6-
nC
-
12.7 -
nC
-
2170 -
pF
-
220 -
pF
-
70 -
pF
-
21 -
ns
-
12 -
ns
-
58 -
ns
-
38 -
ns
-
0.86 1.2 V
-
190 -
ns
-
355 -
nC
9397 750 11845
Product data
Rev. 03 — 11 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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