PB1000S(2005) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany
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PB1000S Datasheet PDF : 2 Pages
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Characteristics
Max. current with cooling fin 300 cm2
Dauergrenzstrom mit Kühlblech 300 cm2
Forward voltage
Durchlass-Spannung
Leakage current
Sperrstrom
Isolation voltage terminals to case
Isolationsspannung Anschlüsse zum Gehäuse
Thermal Resistance Junction – Case
Wärmewiderstand Sperrschicht – Gehäuse
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
TA = 50°C
Tj = 25°C
Tj = 25°C
PB1000 ... PB1010, PB1000S ... PB1010S
R-load
IFAV
C-load
IF = 5 A
VF
Kennwerte
10.0 A
8.0 A
< 1.2 V 1)
VR = VRRM
IR
< 10 µA
VISO
> 2500 V
RthC
< 3.3 K/W
M4
9 ± 10% lb.in
1 ± 10% Nm
120
[%]
100
80
60
40
20
IFAV
0
0 TA 50
100
150 [°C]
Rated forward current vs. ambient temperature
Zul. Richtstrom in Abh. von der Umgebungstemp.
102
[A]
Tj = 125°C
10
Tj = 25°C
1
10-1
IF
10-2
150a-(5a-1.2v)
0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 Per diode – Pro Diode
2
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