P4SMAJ10(2011) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany
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P4SMAJ10
(Rev.:2011)
(Rev.:2011)
Diotec Semiconductor Germany
P4SMAJ10 Datasheet PDF : 4 Pages
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120
[%]
100
80
60
40
IPP
20
PPP
0
0 TA 50
100
150 [°C]
Peak pulse power/current vs. ambient temperature1)
Impuls-Spitzenleistung/Strom vs. Umgebungstemp.1)
1
102
[kW]
10
P4SMAJ5.0 ... P4SMAJ170CA
tr = 10 µs
100
[%]
80
60
40
IPP
20
PPP
0
0
PPPM/2
IPPM/2
tP
t1
2
3
10/1000µs - pulse waveform
10/1000µs - Impulsform
[ms] 4
1
PPP
0.1
0.1µs tP 1µs
10µs
100µs
1ms
10ms
Non repetitive peak pulse power versus pulse width (10/1000 wave form)
Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls)
10000
1000
Cj [pF]
100
unidir.
bidir.
10
1
10 VWM [V] 100
1000
Typ. junction capacitance vs. stand-off voltage
Typ. Sperrschichtkapazität über Sperrspannung
1 Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
4
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