OM6111SA 데이터 시트보기 (PDF) - Unspecified

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OM6111SA

POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE

Unspecified 

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM6011SA / OM6111SA

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

400

V VGS = 0,

Voltage

ID = 250 mA

VGS(th) Gate-Threshold Voltage

2.0

4.0 V VDS = VGS, ID = 250 mA

IGSSF Gate-Body Leakage Forward

100 nA VGS = 20 V

IGSSR Gate-Body Leakage Reverse

-100 nA VGS = - 20 V

IGSS Gate-Body Leakage (OM6111)

± 500 nA VGS = ± 12.8 V

IDSS Zero Gate Voltage Drain

0.1 0.25 mA VDS = Max. Rat., VGS = 0

Current

0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

ID(on) On-State Drain Current1

10

A VDS 2 VDS(on), VGS = 10 V

VDS(on) Static Drain-Source On-State

2.35 2.75 V VGS = 10 V, ID = 5 A

Voltage1

RDS(on) Static Drain-Source On-State

Resistance1

0.47 0.55

VGS = 10 V, ID = 5 A

RDS(on) Static Drain-Source On-State

Resistance1

0.93 1.10

VGS = 10 V, ID = 5 A,

TC = 125 C

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM6012SA / OM6112SA

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSSF

IGSSR

IGSS

IDSS

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Gate-Body Leakage (OM6112)

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

500

V VGS = 0,

ID = 250 mA

2.0

4.0 V VDS = VGS, ID = 250 mA

100 nA VGS = 20 V

- 100 nA VGS = - 20 V

± 500 nA VGS = ± 12.8 V

0.1 0.25 mA VDS = Max. Rat., VGS = 0

0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

8.0

A VDS 2 VDS(on), VGS = 10 V

3.2 3.4 V VGS = 10 V, ID = 4 A

RDS(on) Static Drain-Source On-State

Resistance1

0.8 0.85

VGS = 10 V, ID = 4 A

RDS(on) Static Drain-Source On-State

Resistance1

1.50 1.65

VGS = 10 V, ID = 4 A,

TC = 125 C

DYNAMIC

gfs

Ciss

Coss

Crss

Td(on)

tr

Td(off)

tf

Forward Transductance1

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

4.0

1150

165

70

17

12

45

30

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 5 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 175 V, ID @ 5 A

ns Rg = 5 W , VGS = 10 V

ns (MOSFET) switching times are

essentially independent of

ns operating temperature.

DYNAMIC

gfs

Ciss

Coss

Crss

Td(on)

tr

Td(off)

tf

Forward Transductance1

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

4.0

1275

200

85

17

5

42

14

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 4 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 200 V, ID = 4 A

ns Rg = 5 W , VGS = 10 V

ns (MOSFET) switching times are

essentially independent of

ns operating temperature.

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

(Body Diode)

ISM

Source Current1

(Body Diode)

VSD Diode Forward Voltage1

trr

Reverse Recovery Time

- 10 A Modified MOSPOWER

D

IS

Continuous Source Current

symbol showing

(Body Diode)

- 40 A the integral P-N G

ISM

Source Current1

Junction rectifier.

S

(Body Diode)

- 2 V TC = 25 C, IS = -10 A, VGS = 0 VSD Diode Forward Voltage1

530

ns TJ = 150 C,IF = IS,

trr

Reverse Recovery Time

dlF/ds = 100 A/ms

- 8 A Modified MOSPOWER

D

symbol showing

- 32 A the integral P-N G

-2

700

Junction rectifier.

S

V TC = 25 C, IS = -18 A, VGS = 0

ns TJ = 150 C,IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

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