NJW1302G 데이터 시트보기 (PDF) - ON Semiconductor

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NJW1302G

Complementary NPN-PNP Silicon Power Bipolar Transistors

ON Semiconductor 

NJW3281G (NPN) NJW1302G (PNP)

TYPICAL CHARACTERISTICS

PNP NJW1302G

1

NPN NJW3281G

1

5A

5A

3A

1A

1A

0.1

0.1

0.5 A

3A

IC = 0.1 A

0.5 A

IC = 0.1 A

0.01

0.001

TJ = 25°C

0.01

0.1

0.01

1

0.001

IB, BASE CURRENT (A)

Figure 7. Saturation Region

TJ = 25°C

0.01

0.1

1

IB, BASE CURRENT (A)

Figure 8. Saturation Region

1

IC/IB = 10

1

IC/IB = 10

0.1

25°C

0.1

25°C

125°C

−30°C

−30°C

125°C

0.01

0.01

0.1

1

0.01

10

100

0.01

0.1

1

10

100

IC, COLLECTER CURRENT (A)

IC, COLLECTER CURRENT (A)

Figure 9. VCE(sat), Collector−Emitter Saturation

Voltage

Figure 10. VCE(sat), Collector−Emitter

Saturation Voltage

1.6

VCE = 5 V

1.4

1.2

1.0

0.8

−30°C

0.6

25°C

0.4

125°C

0.2

0.0

0.01

0.1

1

10

100

IC, COLLECTER CURRENT (A)

Figure 11. VBE(on), Base−Emitter Voltage

1.6

VCE = 5 V

1.4

1.2

1.0

0.8

−30°C

0.6

25°C

0.4

125°C

0.2

0.0

0.01

0.1

1

10

100

IC, COLLECTER CURRENT (A)

Figure 12. VBE(on), Base−Emitter Voltage

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