NE592 데이터 시트보기 (PDF) - Philips Electronics
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NE592 Datasheet PDF : 8 Pages
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Philips Semiconductors RF Communications Products
Video amplifier
Product specification
NE592
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Gain vs. Frequency as a
Function of Supply Voltage
60
GAIN 2
50
TA = 25oC
RL = 1kΩ
40
30
20
VS = +8V
10
VS = +6V
0
-10
1
VS = +3V
5 10
50 100
FREQUENCY – MHz
500 1000
Voltage Gain
Adjust Circuit
12
14 11
8
592
1
47
3
0.2µF
0.2µF
51 51
RADJ
1k 1k
VS = +6V TA = 25oC
Supply Current as a
Function of Temperature
21
20
VS = +6V
19
18
17
16
15
14
-60 -20
20
60 100 140
TEMPERATURE – oC
Differential Overdrive
Recovery Time
70
60
VS = +6V
TA = 25oC
GAIN 2
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180 200
DIFFERENTIAL INPUT VOLTAGE – mV
Voltage Gain as a
Function of RADJ (Figure 3)
1000
100
VS = +6V
f = 100kHz
TA = 25oC
FIGURE 3
10
1
.1
.01
1 10 100 1K 10K 100K 1M
RADJ – Ω
Output Voltage and Current
Swing as a Function of
Supply Voltage
7.0
TA = 25oC
6.0
5.0
VOLTAGE
4.0
3.0
CURRENT
2.0
1.0
0
3.0 4.0
5.0 6.0 7.0 8.0
SUPPLY VOLTAGE – +V
Output Voltage Swing as a
Function of Load Resistance
7.0
6.0
VS = +6V
TA = 25oC
5.0
4.0
3.0
2.0
1.0
0
10
50 100
500 1K
5K 10K
LOAD RESISTANCE – Ω
Input Resistance as a
Function of Temperature
70
GAIN 2
60
VS = +6V
50
40
30
20
10
0
-60
-20 0 20
60 100 140
TEMPERATURE – oC
100
90
80
70
60
50
40
30
20
10
0
1
Input Noise Voltage
as a Function of
Source Resistance
GAIN 2
VS = +6V
TA = 25oC
BW = 10MHz
10
100
1K
10K
SOURCE RESISTANCE – Ω
April 15, 1992
255
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