MMBV809LT1 데이터 시트보기 (PDF) - E-Tech Electronics LTD
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MMBV809LT1 Datasheet PDF : 2 Pages
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M M B V 8 0 9 LT 1
TYPICAL CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
0.5 1
2 345
8 10
15
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1000
V R =3Vdc
TA = 25°C
100
10
10
100
1000
f , FREQUENCY ( GHz )
Figure 2. Figure of Merit
1000
V R= 3.0Vdc
f = 1.0MHz
800
600
400
0
0.2
0.4
0.6
0.8
1.0
1.2
f , FREQUENCY ( GHz )
Figure 3. Series Resistance
1.04
1.03
V R= 3.0Vdc
f = 1.0MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
–75 –50 –25
0
+25 +50 +75 +100 +125
T A , AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
I5–2/2
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