MMBT5401 데이터 시트보기 (PDF) - Daya Electric Group Co., Ltd.

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MMBT5401

SOT-23 Plastic-Encapsulate Transistors

Daya Electric Group Co., Ltd. 

SOT-23 Plastic-Encapsulate Transistors

MMBT5401 TRANSISTOR (PNP)

FEATURES

z Complementary to MMBT5551

z Ideal for medium power amplification and switching

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

-

MARKING: 2L

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-160

-150

-5

-0.6

0.3

150

-55-150

Units

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Symbol

Test conditions

V(BR)CBO IC= -100μA, IE=0

V(BR)CEO IC= -1mA, IB=0

V(BR)EBO IE= -10μA, IC=0

ICBO

VCB=-120 V , IE=0

IEBO

VEB=-4V , IC=0

hFE1

VCE= -5V, IC= -1mA

hFE2

VCE= -5V, IC=-10mA

hFE3

VCE= -5V, IC=-50mA

VCE(sat) IC=-50 mA, IB= -5mA

VBE(sat) IC= -50 mA, IB= -5mA

VCE= -5V, IC= -10mA

fT

f=30MHz

MIN

-160

-150

-5

80

100

50

100

MAX UNIT

V

V

V

-0.1 μA

-0.1 μA

300

-0.5

V

-1

V

MHz

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