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MMBF2201NT1(2000) 데이터 시트보기 (PDF) - ON Semiconductor

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MMBF2201NT1
(Rev.:2000)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMBF2201NT1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MMBF2201NT1
Preferred Device
Power MOSFET
300 mAmps, 20 Volts
N–Channel SC–70/SOT–323
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and
battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC–70/SOT–323 Surface Mount Package Saves
Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 70°C
– Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
(Note 1.)
Derate above 25°C
VDSS
VGS
ID
ID
IDM
PD
20
Vdc
± 20
Vdc
mAdc
300
240
750
150
mW
1.2 mW/°C
Operating and Storage Temperature
Range
TJ, Tstg – 55 to °C
150
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
RθJA
TL
833 °C/W
260
°C
1. Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
http://onsemi.com
300 mAMPS
20 VOLTS
RDS(on) = 1 W
N–Channel
3
1
2
MARKING
DIAGRAM
3
SC–70/SOT–323
N1
CASE 419
W
STYLE 8
1
2
W
= Work Week
PIN ASSIGNMENT
3 Drain
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
Gate 1
2 Source
Top View
ORDERING INFORMATION
Device
Package
Shipping
MMBF2201NT1
SC–70/ 3000 Tape & Reel
SOT–323
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MMBF2201NT1/D

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