MKP3V120RL 데이터 시트보기 (PDF) - ON Semiconductor
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MKP3V120RL Datasheet PDF : 5 Pages
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MKP3V120, MKP3V240
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Repetitive Peak Off−State Current
(50 to 60 Hz Sine Wave)
VDRM = 90 V
VDRM = 180 V
ON CHARACTERISTICS
MKP3V120
MKP3V240
IDRM
−
−
10
mA
Breakover Voltage, IBO = 200 mA
VBO
MKP3V120
MKP3V240
V
110
−
130
220
−
250
Breakover Current
Peak On−State Voltage
(ITM = 1 A Peak, Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%)
Dynamic Holding Current
(Sine Wave, 60 Hz, RL = 100 W)
Switching Resistance
(Sine Wave, 50 to 60 Hz)
IBO
−
−
200
mA
VTM
−
1.1
1.5
V
IH
−
−
100
mA
RS
0.1
−
−
kW
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of On−State Current,
Critical Damped Waveform Circuit
(IPK = 130 W, Pulse Width = 10 msec)
di/dt
−
120
−
A/ms
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
Symbol
IDRM
VDRM
VBO
IBO
IH
VTM
ITM
Parameter
Off State Leakage Current
Off State Repetitive Blocking Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
Peak on State Current
ITM
IH
VTM
Slope = RS
IS
IDRM VS
I(BO)
+ Voltage
VDRM
V(BO)
RS
+
(V(BO) – VS)
(IS – I(BO))
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