MGB15N35CL(2006) 데이터 시트보기 (PDF) - ON Semiconductor
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MGB15N35CL Datasheet PDF : 10 Pages
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MGP15N35CL, MGB15N35CL
14
VCC = 300 V
12
VGE = 5.0 V
TJ = 25°C
10
IC = 10 A
L = 300 μH
8
tf
6
4
td(off)
2
0
250
500
750
1000
RG, EXTERNAL GATE RESISTANCE (Ω)
Figure 13. Switching Speed vs. External Gate
Resistance
14
12
10
VCC = 300 V
8 VGE = 5.0 V
TJ = 150°C
6 IC = 10 A
L = 300 μH
4
tf
td(off)
2
0
250
500
750
1000
RG, EXTERNAL GATE RESISTANCE (Ω)
Figure 14. Switching Speed vs. External Gate
Resistance
10
Duty Cycle = 0.5
1 0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
0.01
0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T1
TJ(pk) − TA = P(pk) RθJA(t)
RθJC ≅ R(t) for t ≤ 0.2 s
0.001
0.01
0.1
1
10
t,TIME (S)
Figure 15. Transient Thermal Resistance
(Non−normalized Junction−to−Ambient mounted on
fixture in Figure 16)
100
1000
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6
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