MCR8DCMT4 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
일치하는 목록
MCR8DCMT4 Datasheet PDF : 5 Pages
| |||
MCR8DCM, MCR8DCN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)m
Maximum Lead Temperature for Soldering Purposes (Note 3)
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Peak Repetitive Forward or Peak Repetitive Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak On−State Voltage (Note 4) (ITM = 16 A)
Gate Trigger Current (Continuous dc)
(VAK = 12 V, RL = 100 W, TJ = 25°C)
(TJ = −40°C)
Gate Trigger Voltage (Continuous dc)
(VAK = 12 V, RL = 100 W, TJ = 25°C)
(TJ = −40°C)
(TJ = 125°C)
Holding Current
(VAK = 12 V, Initiating Current = 200 mA, Gate Open)
Latching Current
(VAK = 12 V, IG = 15 mA, TJ = 25°C)
(VAK = 12 V, IG = 30 mA, TJ = −40°C)
DYNAMIC CHARACTERISTICS
TJ = 25°C
TJ = −40°C
Critical Rate of Rise of Off−State Voltage
(VAK = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Surface mounted on minimum recommended pad size.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Symbol
RqJC
RqJA
RqJA
TL
Symbol
IDRM,
IRRM
VTM
IGT
VGT
IH
IL
dv/dt
Max
Unit
2.2
°C/W
88
80
260
°C
Min Typ Max Unit
mA
−
− 0.01
−
−
5.0
−
1.4 1.8
V
mA
2.0 7.0 15
−
−
30
V
0.5 0.65 1.0
−
−
2.0
0.2
−
−
mA
4.0
22
30
−
−
60
mA
4.0
22
30
−
−
60
V/ms
50 200
−
ORDERING INFORMATION
Device
Package
Shipping†
MCR8DCMT4
DPAK
MCR8DCMT4G
MCR8DCNT4
DPAK
(Pb−Free)
DPAK
2500 / Tape & Reel
MCR8DCNT4G
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
Share Link: 