MCL4148
Features
· Silicon epitaxial planar diode
· Fast switching diodes
· 500mW power dissipation
· This diode is also available in the DO-35 case with
the type designation 1N4148
SMALL SIGNAL
SWITCHING DIODES
MICRO MELF
SOLDERABLE ENDS
0.008(0.20)
Mechanical Data
· Case: Mini-MELF glass case(DO-35)
· Weight: Approx. 0.05 gram
0.079(2.00)
0.071(1.80)
0.043(1.10)
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbol
Reverse Voltage
Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at TA=25℃ and F≥50Hz
VR
VRM
IAV
Surge forward current at t<1S and TJ=25℃
Power dissipation at TA=25℃
IFSM
Ptot
Junction temperature
TJ
Storage temperature range
TSTG
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Value
75
100
1501)
500
5001)
175
-65 to +175
Units
Volts
Volts
mA
mA
mW
℃
℃
Electrical characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbols
Min.
Forward voltage
VF
Leakage current at VR=20V
IR
at VR=75V
IR
at VR=20V, TJ=150℃
IR
Junction Capacitance at VR=VF=0V
CJ
Voltage rise when switching ON tested with 50mA
pulse tp=0.1μS, Rise time<30μS, fp=5 to 100KHz
Vfr
Reverse Recovery time from IF=10mA to IR=1mA,
VR=6V, RL=100Ω
Thermal resistance, junction to Ambient
Rectification efficiency at f=100MHz, VRF=2V
trr
RθJA
η
0.45
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Typ.
Max.
1
25
5
50
4
2.5
4
3501)
Units
Volts
nA
μA
μA
pF
Volts
ns
K/W