MBR1535CT 데이터 시트보기 (PDF) - TSC Corporation
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MBR1535CT Datasheet PDF : 3 Pages
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东莞市华远电子有限公司
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.
TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189
TO-220 Plastic-Encapsulate Transistors
MBR1530CT-MBR1560CT
SCHOTTKY BARRIER RECTIFIER
TO— 220
FEATURES
· Schottky Barrier Chip
· Guard Ring Die Construction for Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
1.ANODE
2.CATHODE
3.ANODE
123
1
2
2
3
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Characteristic
MBR
MBR
MBR
MBR
MBR
MBR
Symbol
Unit
1530CT 1535CT 1540CT 1545CT 1550CT 1560CT
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
30
35
40
45
50
60
V
DC Blocking Voltage
VR
PMS Reverse Voltage
VR(RMS)
21
24.5 28
31.5
35
42
V
Average Rectified Output Current
(Note 1)
＠ ＴＣ＝１０５℃
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load
(JEDEC Method)
Forward Voltage Drop ＠ ＩＦ＝７．５Ａ， ＴＣ＝１２５℃
＠ ＩＦ＝７．５Ａ， Ｔ Ｃ＝ ２５℃
VFM
Peak Reverse Current
＠ ＴＣ＝ ２５℃
at Rated DC Blocking Voltage ＠ ＴＣ＝１２５℃
IRM
15
150
0.57
0.70
0.1
15
A
A
0.65
V
0.75
1.0
mA
50
Typical Junction Capacitance (Note 2)
Cj
300
pF
Operating and Storage Temperature Range
Tj,TSTG
-65 to +150
℃
Notes: 1. Thermal resistance junction to case mounted heatsink.
2. Measured at 1.OMHz and applied reverse voltage of 4.0V D
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