MBD330DWT1 데이터 시트보기 (PDF) - E-Tech Electronics LTD

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MBD330DWT1

Dual SCHOTTKY Barrier Diodes

E-Tech Electronics LTD 

MBD110DWT1 MBD330DWT1 MBD770DWT1

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Reverse Breakdown Voltage

V (BR)R

(I R = 10 µA)

MBD110DWT1

7.0

MBD330DWT1

30

MBD770DWT1

70

Diode Capacitance

CT

(V R = 0, f = 1.0 MHz, Note 1) MBD110DWT1

—

Total Capacitance

CT

(V R = 15 Volts, f = 1.0 MHz)

MBD330DWT1

—

(V R = 20 Volts, f = 1.0 MHz)

MBD770DWT1

—

Reverse Leakage

IR

(V R = 3.0 V)

MBD110DWT1

—

(V R = 25 V)

MBD330DWT1

—

(V R = 35 V)

MBD770DWT1

—

Noise Figure

NF

(f = 1.0 GHz, Note 2)

MBD110DWT1

—

Forward Voltage

VF

(I F = 10 mA)

MBD110DWT1

—

(I F = 1.0 mAdc)

MBD330DWT1

—

(I F = 10 mA)

—

(I F = 1.0 mAdc)

MBD770DWT1

—

(I F = 10 mA)

—

Typ

Max

Unit

Volts

10

—

—

—

—

—

pF

0.88

1.0

pF

0.9

1.5

0.5

1.0

0.02

0.25

µA

13

200

nAdc

9.0

200

nAdc

dB

6.0

—

Vdc

0.5

0.6

0.38

0.45

0.52

0.6

0.42

0.5

0.7

1.0

MBD110–2/5

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