M6MGB162S2BVP 데이터 시트보기 (PDF) - Mitsumi

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M6MGB162S2BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

Mitsumi 

BLOCK DIAGRAM

16Mb Flash Memory

A19

A18

A17

A16

A15

A14

A13

A12

A11

ADDRESS

INPUTS

A10

A9

A8

A7

A6

A5

A4

A3

A2

A1

A0

CHIP ENABLE INPUT F-CE#

OUTPUT ENABLE INPUT OE#

WRITE ENABLE INPUT WE#

WRITE PROTECT INPUT F-WP#

RESET/POWER DOWN INPUT F-RP#

READY/BUSY OUTPUT F-RY/BY#

2Mb SRAM

S-A-1

A0

A15

A16

S-CE

WE#

OE#

2

MITSUBISHI LSIs

M6MGB/T162S2BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS

3.3V-ONLY FLASH MEMORY &

2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM

Stacked-MCP (Multi Chip Package)

X-DECODER

Y-DECODER

128 WORD PAGE BUFFER

Main Block

32KW

28

Main Block

Parameter Block7

Parameter Block6

Parameter Block5

Parameter Block4

Parameter Block3

Parameter Block2

Parameter Block1

Boot Block

32KW

16KW

16KW

16KW

16KW

16KW

16KW

16KW

16KW

Y-GATE / SENSE AMP.

STATUS / ID REGISTER

CUI

WSM

MULTIPLEXER

INPUT/OUTPUT

BUFFERS

DQ15 DQ14DQ13DQ12

DQ3DQ2DQ1DQ0

DATA INPUTS/OUTPUTS

262144 WORD x

8 BITS

F-VCC (3.3V)

GND (0V)

DQ 0

DQ 7

CLOCK

GENERATOR

S-VCC

GND

Sep.1999 , Rev.2.0

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