LY62256 데이터 시트보기 (PDF) - Unspecified
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LY62256 Datasheet PDF : 14 Pages
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®
Rev. 2.6
LY62256
32K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL
TEST CONDITION
Supply Voltage
Input High Voltage
VCC
VIH*1
Input Low Voltage
VIL*2
VCC=2.7~3.6V
VCC=4.5~5.5V
Input Leakage Current
ILI VCC ≧ VIN ≧ VSS
Output Leakage
Current
ILO
VCC ≧ VOUT ≧ VSS,
Output Disabled
Output High Voltage
VOH IOH = -1mA
Output Low Voltage
VOL IOL = 2mA
Cycle time = Min.
-35
ICC CE# = VIL , II/O = 0mA -55
Average Operating
Other pins at VIL or VIH -70
Power supply Current
Cycle time = 1µs
ICC1 CE#≦0.2V and II/O = 0mA
other pins at 0.2V or VCC-0.2V
ISB CE# = VIH, other pins at VIL or VIH
LL
Standby Power
Supply Current
CE# ≧VCC-0.2V
ISB1 Others at 0.2V or
VCC - 0.2V
LLE/LLI
SL*5 25℃
SLE*5
SLI*5 40℃
SL
SLE/SLI
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃
5. This parameter is measured at VCC = 3.0V
MIN.
2.7
2.4
- 0.5
- 0.5
-1
-1
2.4
-
-
-
-
-
-
-
-
-
-
-
-
TYP. *4 MAX.
3.3
5.5
- VCC+0.5
-
0.6
-
0.8
-
1
UNIT
V
V
V
V
µA
-
1
µA
3.0
-
V
-
0.4
V
20
50
mA
15
45
mA
10
40
mA
3
10
mA
1
3
mA
1
20
µA
1
30
µA
1
3
µA
1.5
4
µA
1
10
µA
1
20
µA
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
SYMBOL
MIN.
Input Capacitance
CIN
-
Input/Output Capacitance
CI/O
-
Note : These parameters are guaranteed by device characterization, but not production tested.
MAX
6
8
UNIT
pF
pF
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 50pF + 1TTL, IOH/IOL = -1mA/2mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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