NTE160 데이터 시트보기 (PDF) - NTE Electronics
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NTE160 Datasheet PDF : 2 Pages
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NTE160
Germanium PNP Transistor
RF–IF Amp, FM Mixer OSC
Description:
The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a pream-
plifier mixer and oscillator up to 900MHz.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Power Dissipation (TA = +45°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +75°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W max
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750°C/W max
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Collector Cutoff Current
Emitter Cutoff Current
Base–Emitter Voltage
DC Current Gain
Transition Frequency
Reverse Capacitance
Noise Figure
ICES
ICEO
IEBO
VBE
hFE
fT
–Cre
NF
VCE = –20V, VBE = 0
–
VCE = –15V, IB = 0
–
VEB = –0.3V, IC = 0
–
IC = –2mA, VCE = –10V
–
IC = –5mA, VCE = –5V
–
IC = –2mA, VCE = –10V
–
IC = –5mA, VCE = –5V
–
IC = –2mA, VCE = –10V, f = 100MHz –
IC = –2mA, VCE = –10V, f = 450kHz –
IC = –2mA, VCE = –10V, Rg = 60Ω, –
f = 800MHz
Power Gain
Gpb IC = –2mA, VCE = –10V, RL = 2kΩ, 11
f = 800MHz
Typ
–
–
–
–350
–400
50
42
700
0.23
5
14
Max
–8
–500
–100
–
–
–
–
–
–
6
Unit
µA
µA
µA
mV
mV
MHz
pF
dB
– dB
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