NTE179 데이터 시트보기 (PDF) - NTE Electronics

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NTE179

Germanium PNP Transistor Audio Power Amplifier, High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter ON Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(on)

IC = 1A, VCE = 2V

IC = 5A, VCE = 2V

IC = 5A, IB = 100mA

IC = 1A, VCE = 2V

IC = 5A, VCE = 2V

65 – 300

55 – –

– – 0.5 V

– – 0.45 V

– – 0.60 V

Current Gain–Bandwidth Product

fT

IC = 500mA, VCE = 10V

500 – – kHz

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

1.187 (30.16)

.215 (5.45)

.430

(10.92)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

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