NTE126 데이터 시트보기 (PDF) - NTE Electronics

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NTE126

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

NTE Electronics 

NTE126

Germanium Mesa Transistor, PNP,

for High–Speed Switching Applications

Maximum Ratings:

Collector–Emitter Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc

Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc

Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5Vdc

Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW

Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C

Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C

Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol Min Max Unit

Collector–Base Breakdown Voltage

(IC = 100µAdc, IE = 0)

BVCBO

Vdc

15 –

Emitter–Base Breakdown Voltage

(IE = 100µAdc, IC = 0)

Collector–Latch–Up Voltage

(VCC = 11.5 Vdc)

Collector–Emitter Cutoff Current

(VCE = 15Vdc)

Collector–Base Cutoff Current

(VCB = 6Vdc, IE = 0)

BVEBO

LVCEX

ICES

ICBO

Vdc

2.5 –

Vdc

11.5 –

µAdc

– 100

µAdc

– 3.0

DC Current Gain

(IC = 10mAdc, VCE = 0.3Vdc)

(IC = 50mAdc, VCE = 1Vdc)

(IC = 100mAdc, VCE = 1Vdc)

hFE

–

40 –

40 –

40 –

Collector–Emitter Saturation Voltage

(IC = 10mAdc, IB = 1mAdc)

(IC = 50mAdc, IB = 5mAdc)

(IC = 100mAdc, IB = 10mAdc)

VCE(sat)

Vdc

– 0.18

– 0.35

– 0.60

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