LP62E16256E-T 데이터 시트보기 (PDF) - AMIC Technology

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LP62E16256E-T

256K X 16 BIT LOW VOLTAGE CMOS SRAM

AMIC Technology 

Absolute Maximum Ratings*

VCC to GND .............................................. -0.5V to +3.0V

IN, IN/OUT Volt to GND................... -0.5V to VCC + 0.5V

Operating Temperature, Topr ...................-25°C to +85°C

Storage Temperature, Tstg.....................-55°C to +125°C

Power Dissipation, PT....................................................................... 0.7W

LP62E16256E-T Series

*Comments

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to this device.

These are stress ratings only. Functional operation of this

device at these or any other conditions above those

indicated in the operational sections of this specification is

not implied or intended. Exposure to the absolute

maximum rating conditions for extended periods may affect

device reliability.

DC Electrical Characteristics (TA = -25°C to + 85°C, VCC = 1.65V to 2.2V, GND = 0V)

Symbol

Parameter

LP62E16256E-70LLT

Unit

Conditions

Min.

Max.

⏐ILI⏐

Input Leakage Current

-

1

µA VIN = GND to VCC

⏐ILO⏐

Output Leakage Current

ICC

Active Power Supply Current

CE = VIH

-

1

µA HB = VIH or OE = VIH or

WE = VIH

VI/O = GND to VCC

-

5

mA

CE = VIL, II/O = 0mA

ICC1

Dynamic Operating

Current

ICC2

ISB

Standby Current

ISB1

VOL

Output Low Voltage

VOH

Output High Voltage

-

30

mA * Min. Cycle, Duty = 100%

CE = VI, II/O = 0mA

-

10

mA

CE = VIL, VIH = VCC,

VIL = 0V, f = 1MHz,

II/O = 0 mA

-

0.5

mA CE = VIH

-

10

µA CE ≥ VCC - 0.2V,

VIN ≥ 0V

-

0.2

V

IOL = 0.1 mA

1.4

-

V

IOH = -0.1 mA

(August, 2004, Version 1.2)

4

AMIC Technology, Corp.

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