KTC3875 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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KTC3875

NPN Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

NPN Silicon Epitaxial Planar Transistor

KTC3875

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0

60

V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=B 0

50

V

Emitter-base breakdown voltage

V(BR)EBO IE=100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.1 μA

Emitter cut-off current

IEBO

DC current gain

hFE

Collector-emitter saturation voltage VCE(sat)

Transition frequency

fT

Collector output capacitance

Cob

Noise figure

NF

VEB=5V,IC=0

VCE=6V,IC=2mA

70

IC=100mA, IB=B 10mA

VCE=10V, IC= 1mA

80

VCB=10V,IE=0,f=1MHz

VCE=6V,IC=0.1mA,

F=1KHz,Rg=10KΩ

0.1 μA

700

0.1 0.25 V

MHz

2.0 3.5 pF

1.0 10 dB

CLASSIFICATION OF hFE

Rank

O

Range

70-140

Marking

ALO

Y

120-240

ALY

GR

200-400

ALG

BL

350-700

ALL

Document number: BL/SSSTC056

Rev.A

www.galaxycn.com

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