KBP005M-E4 데이터 시트보기 (PDF) - Vishay Semiconductors
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KBP005M-E4 Datasheet PDF : 4 Pages
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KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
100
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
10
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
10
TJ = 125 °C
1
TJ = 100 °C
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
0.1
0.01
0
TJ = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style KBPM
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.460 (11.68) 0.500 (12.70)
0.420 (10.67) 0.460 (11.68)
0.60
(15.2)
MIN.
0.034 (0.86)
0.028 (0.76)
DIA.
0.200 (5.08)
0.180 (4.57)
0.50 (12.7) MIN.
0.060
(1.52)
0.160 (4.1)
0.140 (3.6)
0.105 (2.67)
0.085 (2.16)
Polarity shown on front side of case: positive lead by beveled corner
Document Number: 88531 For technical questions within your region, please contact one of the following:
Revision: 15-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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