IW4040BD 데이터 시트보기 (PDF) - Integral Corp.

부품명

상세내역

일치하는 목록

IW4040BD

12-Stage Binary Ripple Counter High-Voltage Silicon-Gate CMOS

Integral Corp. 

IW4040B

MAXIMUM RATINGS*

Symbol

VCC

VIN

VOUT

IIN

PD

Parameter

DC Supply Voltage (Referenced to GND)

DC Input Voltage (Referenced to GND)

DC Output Voltage (Referenced to GND)

DC Input Current, per Pin

Power Dissipation in Still Air, Plastic DIP+

SOIC Package+

Value

Unit

-0.5 to +20

V

-0.5 to VCC +0.5

V

-0.5 to VCC +0.5

V

±10

mA

500*1

mW

Ptot

Power Dissipation per Output Transistor

Tstg Storage Temperature

TL

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP or SOIC Package)

100

mW

-65 to +150

°C

260

°C

*Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

*1 For TA=-55 to 100°C (package plastic DIP), for TA=-55 to 65°C (package SOIC)

+Derating - Plastic DIP: - 12 mW/°C from 100°Ñ to 125°C

SOIC Package: : - 7 mW/°C from 65°Ñ to 125°C

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

VCC

VIN, VOUT

TA

DC Supply Voltage (Referenced to GND)

DC Input Voltage, Output Voltage (Referenced to GND)

Operating Temperature, All Package Types

Min Max

Unit

3.0

18

V

0

VCC

V

-55

+125

°C

This device contains protection circuitry to guard against damage due to high static voltages or electric

fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages

to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or

VOUT)≤VCC.

Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused

outputs must be left open.

INTEGRAL

2

Share Link: