1500
1200
900
VGE=0V, f = 1MHz
Cies =Cge + Cgc, Cce SHORTED
Cres =Cgc
Coes=Cce+ Cgc
Cies
600
Coes
300
Cres
0
1
10
100
VCE, Collector-to-Emitter Voltage (V)
Figure 5a. Typical Capacitance vs
Collector-to-Emitter Voltage
100
T J = 150 o C
10
IRPT2059A
20
VCC= 400V
IC = 16A
16
12
8
4
0
0
20
40
60
80
QG, Total Gate Charge (nC)
Figure 5b. Typical Gate Charge vs
Gate-to-Emitter Voltage
T J = 25 o C
1
VCC = 50V
5µs PULSE WIDTH
0.1
5
10
15
VGE, Gate-to-Emitter Voltage (V)
Figure 5c. Typical Transfer Characteristics
Figure 6. Nominal R-T Characteristics of the
NTC␣ Thermistor
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