IRHQ6110(2004) 데이터 시트보기 (PDF) - International Rectifier

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IRHQ6110
(Rev.:2004)

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

International Rectifier 

Pre-Irradiation

P-Channel

Q2,Q3

500

 VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

400

Coss = Cds + Cgd

20 ID = -2.3A

16

300

 Ciss

12

IRHQ6110

 VDS = 80V

VDS = 50V

VDS = 20V

200

C oss

100

C rss

0

1

10

100

-VDS, Drain-to-Source Voltage (V)

8

4

 FOR TEST CIRCUIT

SEE FIGURE 1236

0

0

4

8

12

16

QG, Total Gate Charge (nC)

Fig 18. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 19. Typical Gate Charge Vs.

Gate-to-Source Voltage

10

 TJ = 150° C

1

 TJ = 25°C

0.1

0.5

 VGS = 0 V

1.0

1.5

2.0

2.5

3.0

3.5

-VSD ,Source-to-Drain Voltage (V)

Fig 20. Typical Source-Drain Diode

Forward Voltage

www.irf.com

100

 OPERATION IN THIS AREA LIMITED

BY RDS(on)

10

 100us

 1ms

1

 10ms

 TC = 25 °C

TJ = 150 °C

Single Pulse

0.1

1

10

100

1000

-VDS , Drain-to-Source Voltage (V)

Fig 21. Maximum Safe Operating Area

11

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