IRG4BC40SPBF 데이터 시트보기 (PDF) - International Rectifier

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IRG4BC40SPBF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

International Rectifier 

IRG4BC40SPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage 600 — —

V VGE = 0V, IC = 250µA

V(BR)ECS

Emitter-to-Collector Breakdown Voltage „ 18 — —

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.75 —

— 1.32 1.5

V

V/°C

VGE = 0V, IC = 1.0A

VGE = 0V, IC = 1.0mA

IC = 31A

VGE = 15V

VCE(ON)

VGE(th)

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

— 1.68 —

V

IC = 60A

See Fig.2, 5

— 1.32 —

IC = 31A , TJ = 150°C

3.0 — 6.0

VCE = VGE, IC = 250µA

∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -9.3 — mV/°C VCE = VGE, IC = 250µA

gfe

Forward Transconductance …

12 21 — S VCE = 100V, IC = 31A

ICES

Zero Gate Voltage Collector Current

— — 250 µA VGE = 0V, VCE = 600V

— — 2.0

VGE = 0V, VCE = 10V, TJ = 25°C

— — 1000

VGE = 0V, VCE = 600V, TJ = 150°C

IGES

Gate-to-Emitter Leakage Current

— — ±100 n A VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

td(on)

tr

td(off)

tf

Ets

LE

Cies

Coes

Cres

Notes:

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

— 100 150

IC = 31A

— 14 21

— 34 51

nC VCC = 400V

VGE = 15V

See Fig. 8

— 22 —

— 18 — ns TJ = 25°C

— 650 980

IC = 31A, VCC = 480V

— 380 570

VGE = 15V, RG = 10Ω

— 0.45 —

Energy losses include "tail"

— 6.5 — mJ See Fig. 10, 11, 13, 14

— 6.95 9.9

— 23 —

TJ = 150°C,

— 21 —

— 1000 —

ns IC = 31A, VCC = 480V

VGE = 15V, RG = 10Ω

— 940 —

Energy losses include "tail"

— 12 — mJ See Fig. 13, 14

— 7.5 — nH Measured 5mm from package

— 2200 —

VGE = 0V

— 140 —

— 26 —

pF VCC = 30V

ƒ = 1.0MHz

See Fig. 7

 Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,

(See fig. 13a)

„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.

… Pulse width 5.0µs, single shot.

ƒ Repetitive rating; pulse width limited by maximum

junction temperature.

2

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