IRFD9110PBF(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors

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IRFD9110PBF
(Rev.:2008)

Power MOSFET

Vishay Semiconductors 

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRFD9110, SiHFD9110

Vishay Siliconix

VDS

VGS

RG

RD

D.U.T.

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

-

+VDD

Fig. 10a - Switching Time Test Circuit

VGS

10 %

td(on) tr

td(off) tf

90 %

VDS

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Vary tp to obtain

required IAS

RG

- 10 V

tp

L

D.U.T

IAS

0.01 Ω

-

+

V

DD

Fig. 12a - Unclamped Inductive Test Circuit

Document Number: 91138

S-81361-Rev. A, 07-Jul-08

IAS

VDS

VDD

tp

VDS

Fig. 12b - Unclamped Inductive Waveforms

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