IRFD210, SiHFD210
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
TA = 25 °C
TJ = 150 °C
SINGLE PULSE
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91129
S10-2462-Rev. C, 08-Nov-10