IRFD210(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors
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IRFD210 Datasheet PDF : 8 Pages
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IRFD210, SiHFD210
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 0.36 Ab
VDS = 50 V, ID = 0.36 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VGS = 10 V
ID = 3.3 A, VDS = 160 V
see fig. 6 and 13b
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 100 V, ID = 3.3 A
RG = 24 Ω, RD = 30 Ω, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
Drain-Source Body Diode Characteristics
MIN.
200
-
2.0
-
-
-
-
0.10
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.30
-
V/°C
-
4.0
V
-
± 100 nA
-
25
µA
-
250
-
1.5
Ω
-
-
S
140
-
53
-
pF
15
-
-
8.2
-
1.8
nC
-
4.5
8.2
-
17
-
ns
14
-
8.9
-
4.0
-
nH
6.0
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
0.60
A
-
-
4.8
Body Diode Voltage
VSD
TJ = 25 °C, IS = 0.60 A, VGS = 0 Vb
-
-
2.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
150
310
ns
TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/µsb
Qrr
-
0.60 1.4
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %
www.vishay.com
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Document Number: 91129
S-81263-Rev. A, 21-Jul-08
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