IRFD210PBF(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors
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IRFD210PBF Datasheet PDF : 8 Pages
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Power MOSFET
IRFD210, SiHFD210
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
1.5
8.2
1.8
4.5
Single
D
HEXDIP
S
G
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
HEXDIP
IRFD210PbF
SiHFD210-E3
IRFD210
SiHFD210
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
VGS at 10 V
ID
TC = 100 °C
Pulsed Drain Currenta
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Repetitive Avalanche Currenta
IAR
Repetitive Avalanche Energya
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 82 mH, RG = 25 Ω, IAS = 1.2 A (see fig. 12).
c. ISD ≤ 3.3 A, dI/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91129
S-81263-Rev. A, 21-Jul-08
LIMIT
200
± 20
0.60
0.38
4.8
0.0083
79
0.60
0.10
1.0
5.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
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