IRFD120 데이터 시트보기 (PDF) - Fairchild Semiconductor

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IRFD120

1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

Fairchild Semiconductor 

Data Sheet

January 2002

IRFD120

1.3A, 100V, 0.300 Ohm, N-Channel

Power MOSFET

This advanced power MOSFET is designed, tested, and

guaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation. These are

N-Channel enhancement mode silicon gate power field

effect transistors designed for applications such as switching

regulators, switching convertors, motor drivers, relay drivers,

and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power. They can be

operated directly from integrated circuits.

Formerly developmental type TA17401.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFD120

HEXDIP

IRFD120

NOTE: When ordering, use the entire part number.

Features

• 1.3A, 100V

• rDS(ON) = 0.300Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

Packaging

HEXDIP

GATE

DRAIN

SOURCE

©2002 Fairchild Semiconductor Corporation

IRFD120 Rev. B

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