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IRF9230

REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE)

International Rectifier 

PD - 90548C

IRF9230

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFETTRANSISTORS

JANTX2N6806

JANTXV2N6806

THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]

200V, P-CHANNEL

Product Summary

Part Number BVDSS

IRF9230 -200V

RDS(on)

0.80 Ω

ID

-6.5A

The HEXFETtechnology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of parelleling and temperature

stability of the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

Absolute Maximum Ratings

ID @ VGS = 0V, TC = 25°C

ID @ VGS = 0V, TC = 100°C

IDM

PD @ TC = 25°C

Parameter

Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

VGS

EAS

IAR

EAR

dv/dt

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

TJ

TSTG

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

TO-3

Features:

n Repetitive Avalanche Ratings

n Dynamic dv/dt Rating

n Hermetically Sealed

n Simple Drive Requirements

n Ease of Paralleling

Units

-6.5

-4.0

A

-28

75

W

0.60

W/°C

±20

V

66

mJ

-6.5

A

7.5

mJ

-5.0

V/ns

-55 to 150

oC

300 (0.063 in. (1.6mm) from case for 10s)

11.5 (typical)

g

For footnotes refer to the last page

www.irf.com

1

01/22/01

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