IRF740ASPBF 데이터 시트보기 (PDF) - International Rectifier

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IRF740ASPBF

HEXFET Power MOSFET

International Rectifier 

IRF740AS/LPbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

400 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.48 –––

V/°C Reference to 25°C, ID = 1mA†

RDS(on)

Static Drain-to-Source On-Resistance ––– ––– 0.55 Ω VGS = 10V, ID = 6.0A „

VGS(th)

Gate Threshold Voltage

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

IDSS

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250

µA VDS = 400V, VGS = 0V

VDS = 320V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– 100 nA VGS = 30V

––– ––– -100

VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

gfs

Forward Transconductance

4.9 ––– ––– S VDS = 50V, ID = 6.0A†

Qg

Total Gate Charge

––– ––– 36

ID = 10A

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

––– ––– 9.9

––– ––– 16

nC VDS = 320V

VGS = 10V, See Fig. 6 and 13 „†

td(on)

Turn-On Delay Time

––– 10 –––

VDD = 200V

tr

td(off)

tf

Rise Time

Turn-Off Delay Time

Fall Time

––– 35 ––– ns ID = 10A

––– 24 –––

RG = 10Ω

––– 22 –––

RD = 19.5Ω,See Fig. 10 „†

Ciss

Input Capacitance

––– 1030 –––

VGS = 0V

Coss

Output Capacitance

––– 170 –––

VDS = 25V

Crss

Reverse Transfer Capacitance

––– 7.7 ––– pF ƒ = 1.0MHz, See Fig. 5†

Coss

Output Capacitance

––– 1490 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

Coss

Coss eff.

Output Capacitance

Effective Output Capacitance

––– 52 –––

––– 61 –––

VGS = 0V, VDS = 320V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 320V …†

Avalanche Characteristics

Parameter

EAS

Single Pulse Avalanche Energy‚†

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

630

10

12.5

Units

mJ

A

mJ

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

RθJA

Junction-to-Case

–––

Junction-to-Ambient ( PCB Mounted, steady-state)*

–––

1.0

°C/W

40

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 10

A showing the

integral reverse

G

––– ––– 40

p-n junction diode.

S

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

2

––– ––– 2.0 V TJ = 25°C, IS = 10A, VGS = 0V „

––– 240 360 ns TJ = 25°C, IF = 10A

––– 1.9 2.9 µC di/dt = 100A/µs „†

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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