IPD12N03LBG 데이터 시트보기 (PDF) - Infineon Technologies
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IPD12N03LBG Datasheet PDF : 12 Pages
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Parameter
Symbol Conditions
IPD12N03LB G
IPU12N03LB G
IPS12N03LB G
IPF12N03LB G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
C iss
-
C oss
V GS=0 V, V DS=15 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=15 V, V GS=10 V,
-
t d(off)
I D=15 A, R G=2.7 Ω
-
tf
-
1000
360
49
6
5
18
2.6
1300 pF
480
74
9 ns
7
27
4
Q gs
-
3
4 nC
Q g(th)
-
1.6
2.2
Q gd
V DD=15 V, I D=15 A,
-
2.1
3
Q sw
V GS=0 to 5 V
-
4
5
Qg
-
8
11
V plateau
-
3.2
-V
Gate charge total, sync. FET
Q g(sync) V GS=10 V, I D=30 A
-
7
9 nC
Output charge
Q oss
V DD=15 V, V GS=0 V
-
8
11
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=30 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
30 A
-
-
210
-
0.93
1.2 V
-
-
10 nC
6) See figure 16 for gate charge parameter definition
Rev. 1.5
page 3
2006-05-15
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