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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

IL252(2004) 데이터 시트보기 (PDF) - Vishay Semiconductors

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IL252 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Forward continuous current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
IF
Pdiss
Value
60
100
1.33
Unit
mA
mW
mw/°C
Output
Parameter
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base breakdown voltage
Power dissipation single channel
Power dissipation dual channel
Derate linearly from 25 °C single channel
Derate linearly from 25 °C dual channel
Test condition
Symbol
BVCEO
BVEBO
BVCBO
Pdiss
Pdiss
Value
30
5.0
70
200
150
2.6
2.0
Unit
V
V
V
mW
mW
mW/°C
mW/°C
Coupler
Parameter
Test condition
Isolation test voltage (between
emitter and detector referred to
standard climate
23 °C/50 %RH, DIN 50014)
Creepage
Clearance
Isolation resistance
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
Total dissipation single channel
Total dissipation dual channel
Derate linearly from 25 °C single
channel
Derate linearly from 25 °C dual
channel
Storage temperature
Operating temperature
Lead soldering time at 260 °C
Symbol
VISO
RIO
RIO
Ptot
Ptot
Tstg
Tamb
Value
5300
7.0
7.0
1012
1011
250
400
3.3
5.3
- 55 to + 150
- 55 to + 100
10
Unit
VRMS
mm
mm
mW
mW
mW/°C
mW/°C
°C
°C
sec.
www.vishay.com
2
Document Number 83618
Rev. 1.3, 20-Apr-04

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