Q67100-Q2179 데이터 시트보기 (PDF) - Siemens AG

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Q67100-Q2179

3.3V 1M × 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module

Siemens AG 

HYM 64(72)V1005GU-50/-60

1M x 64/72 DRAM Module

Absolute Maximum Ratings

Operating temperature range ......................................................................................... 0 to + 70 °C

Storage temperature range...................................................................................... – 55 to + 125 °C

Input/output voltage .............................................................................. –0.5 to min (Vcc+0.5, 4.6) V

Power supply voltage.................................................................................................... –0.5 to 4.6 V

Power dissipation.................................................................................................................. 4.42 W

Data out current (short circuit) ................................................................................................ 50 mA

Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent

damage to the device. Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

DC Characteristics

TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V

Parameter

Input high voltage

Input low voltage

Output high voltage (LVTTL)

Output „H“level voltage ( IOUT = – 2 mA)

Output low voltage (LVTTL)

Output „L“level voltage ( IOUT = + 2 mA)

Output high voltage (LVCMOS)

Output „H“level voltage ( IOUT =– 100µA)

Output low voltage (LVCMOS)

Output „L“level voltage ( IOUT =+100 µA)

Input leakage current

(0 V < VIN < Vcc, all other pins = 0 V)

Output leakage current

(DO is disabled, 0 V < VOUT < Vcc)

Symbol

x 64/ x72

Unit Notes

min.

max.

VIH

2.0 Vcc + 0.5 V 1)

VIL

– 0.5

0.8 V 1)

VOH

2.4

–

V 1)

VOL

–

0.4 V 1)

VOH

Vcc-0.2

–

V 1)

VOL

–

0.4 V 1)

II(L)

– 10

10 µA 1)

IO(L)

– 10

+10 µA 1)

Semiconductor Group

7

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