HY57V658020B 데이터 시트보기 (PDF) - Hynix Semiconductor

부품명

상세내역

일치하는 목록

HY57V658020B

4 Banks x 2M x 8Bit Synchronous DRAM

Hynix Semiconductor 

CAPACITANCE (TA=25°C, f=1MHz)

Parameter

Input capacitance

Data input / output capacitance

Pin

CLK

A0 ~ A11, BA0, BA1, CKE, CS, RAS,

CAS, WE, DQM

DQ0 ~ DQ7

OUTPUT LOAD CIRCUIT

Symbol

Min

CI1

2

CI2

2.5

CI/O

2

HY57V658020B

Max

Unit

4

pF

5

pF

6.5

pF

Output

Vtt=1.4V

RT=250 Ω

Output

50pF

50pF

DC Output Load Circuit

AC Output Load Circuit

DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V)

Parameter

Input Leakage Current

Output Leakage Current

Output High Voltage

Output Low Voltage

Symbol

ILI

ILO

VOH

VOL

Min.

-1

-1

2.4

-

Note :

1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V

2.DOUT is disabled, VOUT=0 to 3.6V

Max

1

1

-

0.4

Unit

uA

uA

V

V

Note

1

2

IOH = -4mA

IOL = +4mA

Rev. 1.6/Nov. 01

5

Share Link: