HUF75631P3 데이터 시트보기 (PDF) - Fairchild Semiconductor
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HUF75631P3 Datasheet PDF : 10 Pages
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HUF75631P3, HUF75631S3ST
Typical Performance Curves (Continued)
300
SINGLE PULSE
TJ = MAX RATED
100
TC = 25oC
200
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
100
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
10ms
1
1
10
100
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
STARTING TJ = 150oC
STARTING TJ = 25oC
10
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
40
TJ = 175oC
20
TJ = -55oC
TJ = 25oC
0
2
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
60
VGS = 20V
VGS = 10V
40
VGS = 7V
VGS = 6V
VGS = 5V
20
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
VGS = 10V, ID = 33A
2.0
1.5
1.0
0.5
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
-80 -40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF75631P3, HUF75631S3ST Rev. B
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