HGTG30N120CN 데이터 시트보기 (PDF) - Fairchild Semiconductor
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HGTG30N120CN Datasheet PDF : 8 Pages
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HGTG30N120CN
Typical Performance Curves Unless Otherwise Specified (Continued)
600
RG = 3Ω, L = 1mH, VCE = 960V
500
400
TJ = 150oC, VGE = 12V, VGE = 15V
300
200
TJ = 25oC, VGE = 12V, VGE = 15V
100
5 10 15 20 25 30 35 40 45 50 55 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
800
RG = 3Ω, L = 1mH, VCE = 960V
700
600
500
TJ = 150oC, VGE = 12V AND 15V
400
300
200
100 TJ = 25oC, VGE = 12V AND 15V
0
5 10 15 20 25 30 35 40 45 50 55 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
500
DUTY CYCLE < 0.5%, VCE = 20V
PULSE DURATION = 250µs
TC = -55oC
400
TC = 25oC
300
TC = 150oC
200
100
0
7
8
9
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
10
CIES
8
FREQUENCY = 1MHz
6
4
2
COES
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
©2001 Fairchild Semiconductor Corporation
16
IG(REF) = 2mA, RL = 20Ω, TC = 25oC
14
12
VCE = 1200V
10
8
VCE = 400V
VCE = 800V
6
4
2
0
0
50
100
150
200
250
300
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
40 DUTY CYCLE < 0.5%, TC = 110oC
35 PULSE DURATION = 250µs
30
VGE = 15V
25
20
VGE = 10V
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
HGTG30N120CN Rev. B
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