FS4VS-12 데이터 시트보기 (PDF) - Renesas Electronics
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FS4VS-12 Datasheet PDF : 7 Pages
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GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
Tch = 25°C
ID = 4A
16
VDS = 100V
12
200V
400V
8
4
0
0
8
16 24 32 40
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS4VS-12
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
VGS = 0V
Pulse Test
16
TC=125°C
12
8
25°C
75°C
4
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7 VGS = 10V
5 ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
10–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
101
7
5
3
2 D=1
100 0.5
7
5 0.2
3 0.1
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PDM
10–1
0.05
7
0.02
5
0.01
3
2
Single Pulse
tw
T
D=
tw
T
10–2
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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