FS12VS-5 데이터 시트보기 (PDF) - Renesas Electronics
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FS12VS-5 Datasheet PDF : 7 Pages
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GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
Tch = 25°C
ID = 12A
16
VDS = 50V
100V
12
200V
8
4
0
0
8
16 24 32 40
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS12VS-5
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
TC = 125°C
32
VGS = 0V
Pulse Test
75°C
24
25°C
16
8
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7 VGS = 10V
5 ID = 6A
Pulse Test
3
2
100
7
5
3
2
10–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
101
7
5
3
2 D=1
100
7
0.5
5 0.2
3
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
0.1
PDM
10–1
7
0.05
5
0.02
3
0.01
2
Single Pulse
tw
T
D=
tw
T
10–2
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Sep. 2001
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