FS10KMJ-06 데이터 시트보기 (PDF) - Renesas Electronics
부품명
상세내역
일치하는 목록
FS10KMJ-06 Datasheet PDF : 7 Pages
| |||
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10
Tch = 25°C
ID = 10A
8
VDS = 10V
6
20V
40V
4
2
0
0
4
8
12 16 20
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS10KMJ-06
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
VGS = 0V
Pulse Test
32
24
TC = 125°C
75°C
16
25°C
8
0
0
0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7 VGS = 10V
5
4
ID = 1/2ID
Pulse Test
3
2
100
7
5
4
3
2
10–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
5
3
2
101
7 D = 1.0
5 0.5
3
2 0.2
PDM
100
0.1
7
5
0.05
0.02
3
0.01
2
Single Pulse
tw
T
D= tw
T
10–1
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
Share Link: 