FL10KM-12A(2003) 데이터 시트보기 (PDF) - Renesas Electronics
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FL10KM-12A Datasheet PDF : 5 Pages
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GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
20
TCh = 25°C
ID = 10A
16
12
VDS = 100V
8
200V
400V
4
0
0
20 40 60 80 100
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FL10KM-12A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
VGS = 0V
Pulse Test
32
TC = 125°C
75°C
24
25°C
16
8
0
0
0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
VGS = 10V
7 ID = 5A
5 Pulse Test
3
2
100
7
5
3
2
10–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
101
7
5 D = 1.0
3
2 0.5
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
100 0.2
7
5 0.1
3 0.05
2
PDM
10–1
7
5
3
2
0.02
0.01
Single Pulse
tw
T
D= tw
T
10–2
10–42 3
5 710–32 3
5 710–22 3
5 710–12 3
5 7 100 2 3
5 7 101 2 3
5 7 102
PULSE WIDTH tw (s)
Sep. 2001
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