MBM29SL160BD 데이터 시트보기 (PDF) - Fujitsu

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MBM29SL160BD

FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT

Fujitsu 

MBM29SL160TD-10/-12/MBM29SL160BD-10/-12

s PRODUCT LINE UP

Part No.

Ordering Part No.

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

VCC = 2.0 V±0.2V

MBM29SL160TD/MBM29SL160BD

-10

-12

100

120

100

120

35

50

s BLOCK DIAGRAM

RY/BY

Buffer

V CC

V SS

RY/BY

Erase Voltage

Generator

DQ 0 to DQ 15

Input/Output

Buffers

WE

BYTE

RESET

WP/ACC

CE

OE

State

Control

Command

Register

Program Voltage

Generator

Chip Enable

Output Enable

Logic

STB Data Latch

A0 to A19

A-1

STB

Y-Decoder

Low V CC Detector

Timer for

Program/Erase

Address

Latch

X-Decoder

Y-Gating

Cell Matrix

8

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