EMP11 데이터 시트보기 (PDF) - ROHM Semiconductor

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EMP11

Switching Diode (High speed switching)

ROHM Semiconductor 

EMP11

Switching Diode (High speed switching)

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline

VRM

80

V

IFM

300

mA

Io

100

mA

IFSM

4000

mA

●Features

High reliability

Small mold type

High Speed switching

●Inner Circuit

Data sheet

　　　

　

　

　

　

　

　

　

　

　　　

●Application

High speed switching

●Structure

Epitaxial planar

●Absolute Maximum Ratings (Ta = 25ºC)

Parameter

Symbol

Reverse voltage

VR

Repetitive peak reverse voltage

VRM

Average rectified forward current

Io

Forward current

IFM

Peak forward surge current

IFSM

Power dissipation *

　 　 　 PD

Junction temperature

Tj

Storage temperature

Tstg

*4 elements total

●Characteristics (Ta = 25ºC)

Parameter

Symbol

Forward voltage

VF

Reverse current

IR

Capacitance between terminals

Ct

Reverse recoverytime

trr

※Caution：static electricity

●Packaging Specifications

Packing

Embossed Tape

Reel Size(mm)

180

Taping Width(mm)

8

Basic Ordering Unit(pcs)

8000

Taping Code

T2R

Marking

P11

Conditions

-

-

-

-

t=1μs

-

-

-

Limits

Unit

80

V

80

V

100

mA

300

mA

4000

mA

150

mW

150

℃

-55 ～ 150

℃

Conditions

IF=100mA

VR=70V

VR=6.0V f=1.0MHz

VR=6.0V IF=5.0mA RL=50Ω

　　

Min.

-

-

-

-

Value per element

Typ. Max. Unit

- 1.2 V

- 0.1 μA

- 3.5 pF

- 4.0 ns

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　　　　　　　　　　　　　　　

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　 2018/06/06_Rev.002

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