ADG419TQ 데이터 시트보기 (PDF) - Analog Devices
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ADG419TQ Datasheet PDF : 8 Pages
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ADG419–SPECIFICATIONS1
Dual Supply (VDD = +15 V ؎ 10%, VSS = –15 V ؎ 10%, VL = +5 V ؎ 10%, GND = 0 V, unless otherwise noted)
Parameter
ANALOG SWITCH
Analog Signal Range
RON
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
DYNAMIC CHARACTERISTICS2
tTRANSITION
B Version
–40؇C to
+25؇C
+85؇C
VSS to VDD
25
35
45
± 0.1
± 0.25
±5
± 0.1
± 0.75
±5
± 0.4
± 0.75
±5
2.4
0.8
± 0.005
± 0.5
160
200
T Version
–55؇C to
+25؇C +125؇C
Units
VSS to VDD V
25
Ω typ
35
45
Ω max
± 0.1
± 0.25 ± 15
± 0.1
± 0.75 ± 30
± 0.4
± 0.75 ± 30
nA typ
nA max
nA typ
nA max
nA typ
nA max
2.4
0.8
± 0.005
± 0.5
V min
V max
µA typ
µA max
145 200
ns max
Break-Before-Make Time
30
30
Delay, tD
5
5
OFF Isolation
80
80
Channel-to-Channel Crosstalk
90
70
CS (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
ISS
IL
6
55
0.0001
1
2.5
0.0001
1
2.5
0.0001
1
2.5
6
55
0.0001
1
2.5
0.0001
1
2.5
0.0001
1
2.5
NOTES
1Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ns typ
ns min
dB typ
dB typ
pF typ
pF typ
µA typ
µA max
µA typ
µA max
µA typ
µA max
Test Conditions/Comments
VD = ± 12.5 V, IS = –10 mA
VDD = +13.5 V, VSS = –13.5 V
VDD = +16.5 V, VSS = –16.5 V
VD = ± 15.5 V, VS = ϯ15.5 V;
Test Circuit 2
VD = ± 15.5 V, VS = ϯ15.5 V;
Test Circuit 2
VS = VD = ± 15.5 V;
Test Circuit 3
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF;
VS1 = ± 10 V, VS2 = ϯ10 V;
Test Circuit 4
RL = 300 Ω, CL = 35 pF;
VS1 = VS2 = ± 10 V;
Test Circuit 5
RL = 50 Ω, f = 1 MHz;
Test Circuit 6
RL = 50 Ω, f = 1 MHz;
Test Circuit 7
f = 1 MHz
f = 1 MHz
VDD = +16.5 V, VSS = –16.5 V
VIN = 0 V or 5 V
VL = +5.5 V
–2–
REV. A
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