DG180AP/883 데이터 시트보기 (PDF) - Vishay Semiconductors
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DG180AP/883 Datasheet PDF : 9 Pages
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DG180/181/182
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Current vs. Temperature
5
100
4
80
IIN vs. VIN and Temperature
VINL = 0
VINH = 5 V
3
IL
–I–
2
–IR
1
I+
0
–55 –35 –15
5 25 45 65
Temperature (_C)
85 105 125
rDS(on) vs. Temperature
100
DG182
DG181
10
DG180
VD = –7.5 V
IS = –10 mA
1
–50 –25
0 25 50 75 100 125
Temperature (_C)
Leakage vs. Temperature (DG180)
100
V+ = 10 V
V– = –20 V
VL = 5 V
VR = 0
10
1
0.1
25
IS(off)
ID(on)
ID(off)
45
65
85
105
125
Temperature (_C)
60
–IINL
40
20
IINH
0
–55 –35 –15
5 25 45 65 85 105 125
Temperature (_C)
Switching Time vs. VD and Temperature (DG180)
230
VD = 7.5 V
210
VD = –7.5 V
tON
190
170
tOFF
150
130
110
90
–55 –35 –15
5 25 45 65
Temperature (_C)
85 105 125
Switching Time vs. VD and Temperature (DG181/182)
130
120
VD = 7.5 V
VD = –7.5 V
110
tON
100
90
tOFF
80
70
60
50
–55 –35 –15
5 25 45 65 85 105 125
Temperature (_C)
www.vishay.com S FaxBack 408-970-5600
4-6
Document Number: 70031
S-52895—Rev. D, 16-Jun-97
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